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  S9970/s9971 series S9970/s9971 series are families of fft-ccd image sensors specifically designed for low-light-level detection in scientific appl ications. S9970/s9971 series offer lower dark current and lower readout noise than s7010/s7011 series that have been marketed. by using t he binning operation, S9970/s9971 series can be used as a linear image sensor having a long aperture in the direction of the device length . this makes S9970/s9971 series ideally suited for use in spectrophotometry. the binning operation offers significant improvement in s/n and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. S9970/s9971 se ries also feature low noise and low dark signal (mpp mode operation). this enables low-light-level detection and long integration time, t hus achieving a wide dynamic range. S9970/s9971 series have an effective pixel size of 24 24 m and are available in image areas ranging from 12.288 (h) 1.44 ( v) mm 2 (512 60 pixels) up to a large image area of 24.576 (h) 6.048 (v) mm 2 (1024 252 pixels). S9970/s9971 series are pin compatible with s7010/s7011 series. (operating conditions are a little bit changed from s7010/s7011 series.) features l low dark signal: 10 e - /pixel/s typ. (0 ?c, mpp mode) l low readout noise: 4 e - rms typ. l 512 (h) 60 (v) to 1024 (h) 252 (v) pixel format l pixel size: 24 24 m l line/pixel binning l 100 % fill factor l wide dynamic range l mpp operation applications l fluorescence spectrometer, icp l raman spectrometer l industrial inspection requiring l semiconductor inspection l dna sequencer l low-light-level detection image sensor ccd area image sensor low dark signal low readout noise/front-illuminated fft-ccd selection guide type no. cooling number of total pixels number of active pixels active area [mm (h) mm (v)] suitable multichannel detector head S9970-0906 532 64 512 60 12.288 1.440 S9970-1006 1044 64 1024 60 24.576 1.440 S9970-1007 1044 128 1024 124 24.576 2.976 S9970-1008 non-cooled 1044 256 1024 252 24.576 6.048 c7020 s9971-0906 532 64 512 60 12.288 1.440 s9971-1006 1044 64 1024 60 24.576 1.440 s9971-1007 1044 128 1024 124 24.576 2.976 c7021 s9971-1008 one-stage te-cooled 1044 256 1024 252 24.576 6.048 c7025 general ratings parameter specification pixel size 24 (h) 24 (v) m vertical clock phase 2 phase horizontal clock phase 2 phase output circuit one-stage mosfet source follower package 24 pin ceramic dip (refer to dimensional outlines) window * 1 S9970 series: quartz glass s9971 series: sapphire glass *1: temporary window type (ex. S9970-0906n) and uv coa t type (ex. s 9970-0906uv) are available upon request. (temporary window is fixed by tape to protec t the ccd chip and wire bonding.) 1
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ccd area image sensor S9970/s9971 series  spectral response (without window) 50 40 30 20 10 0 200 400 300 500 600 700 wavelength (nm) 800 900 1000 1100 1200 quantum efficiency (%) (typ. ta=25  c) uv coat  spectral transmittance characteristics 0 10 100 200 wavelength (nm) transmittance (%) 300 400 500 600 700 800 900 1000 20 30 40 50 60 70 80 90 100 (typ. ta=25  c) quartz window sapphire window 3  1 # @,*ad #9   3  c6 7   7 ?      
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ccd area image sensor S9970/s9971 series  device structure, line output format ...... ...... ...... v 1h ig1v ig2v isv ss rg rd os od og sg d1 d2 d3 d4 d5 d6 d7 d8 d9 d10 d11 d12 d13 d14 d15 d16 d17 d18 d19 d20 1 2 3 45 6 20 23 22 24 16 15 v=60, 124, 252 h=512, 1024 ish ig1h ig2h p1h p2h 13 12 11 10 9 4 blank 4 blank 4 optical black 4 optical black 512 or 1024 signal out 2 isolation 2 isolation tg p1v 14 p2v integration period (shutter must be open) vertical binning period (shutter must be closed) 3.. 62 3..126 3..254 63 127 255 64 128 256 p1v p2v, tg p1h p2h, sg readout period (shutter must be closed) 60 + 4 (isolation): S9970/1-0906/-1006 124 + 4 (isolation): S9970/1-1007 252 + 4 (isolation): S9970/1-1008 tpwv to v r tpwh, tpws tpwr 123 531 1043 532 1044 : S9970/1-0906 : S9970/1-1006/-1007/-1008 4..530 4..1042 12 d19 d2 d1 d20 rg os s1..s512 d3..d10, s1..s1024, d11..d18 : S9970/1-0906 : S9970/1-1006/-1007/-1008 l73$',,&1 3   e ????? ? ??? ?? ??? ?? ? ????? ?? ?? ??? ?
ccd area image sensor S9970/s9971 series integration period (shutter must be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed) enlarged view tpwv to v r tpwr d1 d2 d3 d4 d18 d19 d20 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 4.. 63 4..127 4..255 s1..s512 d5..d10, s1..s1024, d11..d17 : S9970/1-0906 : S9970/1-1006/-1007/-1008 64 60 + 4 (isolation): S9970/1-0906/-1006 128 124 + 4 (isolation): S9970/1-1007 256 252 + 4 (isolation): S9970/1-1008 kmpdc0229ea 3  c6 7   7 ?  %%&'f%%&.('%') .* -* ( %%&'f%%&.(.'') +' %' ( %%&'f%%&.(.''& )' ./ ( 3 9 # %%&'f%%&.(.''/ 9 < .+ ., +) ( 5 3.!d3,!d 2 c  d  ( ,'' ( (  3 9 # 9# ( *'' *''' (  c  #d # < .+ .' ( (  3.d3, $  ( ( ( *' ( i 3 9 # 9 < .- *'' *''' (  c  d  ( .' ( (  2 $  ( ( ( *' ( i 3 9 # 9 .'' *'' (  c2 c  d  ( * ( (  2(3. 0  ( + ) ( 5 <.+= #6 #   *'i6   <.-=3, 2#  ##  area scanning 2: large full well mode 5 integration period (shutter must be open) p1v rg os p2v, tg p1h p2h, sg readout period (shutter must be closed) enlarged view 4.. 63 4..127 4..255 tpwv to v r tpwr d1 d2 d3 d4 d18 d19 d20 s1..s512 d5..d10, s1..s1024, d11..d17 : S9970/1-0906 : S9970/1-1006/-1007/-1008 p2v, tg p1h p2h, sg rg os tpwh, tpws 123 64 60 + 4 (isolation): S9970/1-0906/-1006 128 124 + 4 (isolation): S9970/1-1007 256 252 + 4 (isolation): S9970/1-1008 kmpdc0228ea area scanning 1: low dark current mode
ccd area image sensor S9970/s9971 series  $     = S9970-0906 a 31.75 0.3 10.05 0.25 0.46 3.0 2.54 27.94 b 1.1 0.3 photosensitive surface photosensitive surface 1st pin indication pad a 40.64 0.41 14.99 0.25 b 1.1 0.3 1st pin indication pad photosensitive surface 0.46 3.0 2.54 27.94 photosensitive surface     %%&'('%') .,,// .--'! %%&'(.'') ,-*&) .--'! %%&'(.''& ,-*&) ,%&)! %%&'(.''/ ,-*&) )'-/! 6 kmpda0195ea a 40.64 0.41 10.05 0.25 b 1.1 0.3 1st pin indication pad photosensitive surface 0.46 3.0 2.54 27.94 photosensitive surface kmpda0194ea kmpda0193ea S9970-1008 S9970-1006/-1007
ccd area image sensor S9970/s9971 series a 40.64 0.41 14.99 0.25 b 3.2 0.4 c 12.0 4.0 5.0 0.46 2.54 27.94 7.65 0.5 58.84 1st pin indication pad photosensitive surface te-cooler a 32.0 0.3 14.99 0.25 0.46 2.54 27.94 b 3.2 0.4 c 12.0 7.65 0.5 50.0 4.0 5.0 1st pin indication pad photosensitive surface te-cooler 7.3 1.0 6.7 5.3 photosensitive surface (24 ) 0.5 7.7 1st pin indication pad 6.048 4.0 19.0 22.4 22.9 44.0 52.0 60.0 2.54 window 28.6 active area 24.576 8.2 te-cooler      %%&.('%') .,,// .--'! &* %%&.(.'') ,-*&) .--'! &* %%&.(.''& ,-*&) ,%&)! &. 7 kmpda0196ea kmpda0197ea kmpda0198ea s9971-1006/-1007 s9971-1008 s9971-0906
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ccd area image sensor S9970/s9971 series 0 1 2 3 voltage (v) ccd temperature (  c) 4 7 6 5 -40 -30 4 3 2 current (a) 1 0 -20 -10 0 10 20 30 (typ. ta=25  c) voltage vs. current ccd temperature vs. current 0 2 4 6 10 8 -30 2.0 1.5 1.0 0.5 0 -20 -10 0 10 20 (typ. ta=25  c) voltage (v) ccd temperature (  c) current (a) voltage vs. current ccd temperature vs. current 0 1 2 3 5 4 -30 2.0 1.5 1.0 0.5 0 -20 -10 0 10 20 (typ. ta=25  c) voltage (v) ccd temperature (  c) current (a) voltage vs. current ccd temperature vs. current l73$j'.&)1j l73$j'.&&1j l73$j'.&%1j s9971-0906 s9971-1006/-1007 s9971-1008  1(# 9
ccd area image sensor S9970/s9971 series hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, t elephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2007 hamamatsu photonics k.k. cat. no. kmpd1089e06 feb. 2007 dn  precaution for use (electrostatic countermeasures)  handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist strap, in order to prevent electrostatic damage due to electrical charges from friction.  avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.  provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge.  ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs.  element cooling/heating temperature incline rate when cooling the ccd by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the ccd to warm back is less than 5 k/minute.    (    ##  #6
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